A team of researchers with members from the University of California and Rice University has found a way to get a flat transistor to defy theoretical limitations on Field Effect Transistors (FETs). In their paper published in the journal Nature, the team describes their work and why they believe it could lead to consumer devices that have both smaller electronics and longer battery life. Katsuhiro Tomioka with Erasmus MC University Medical Center in the Netherlands offers a News & Views article discussing the work done by the team in the same journal edition.
Ref: Condensed-matter Physics: Flat transistor defies the limit. Nature (2015) | DOI: 10.1038/526051a
A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature (2015) | DOI: 10.1038/nature15387